smb plastic-encapsulate diodes features 1 h igh diode semiconductor smb thyristor surge suppressors low switching voltage low on-state voltage does not degrade surge capability after multiple surge events within limit fails short circuit when sur ged in excess of ratings low capacitance protect circuit applications parameter definition co off-state capacitance?typical capacitance measured in off state di /dt rate of rise of current ?maximum rated value of the acceptable rate of rise in current over time is switching current?maximum current required to switch to on state idrm leakage current ?maximum peak off-state current measured at vdrm ih holding current ?minimum current required to maintain on state ipp peak pulse current?maximum rated peak impulse current it on-state current?maximum rated continuous on-state current itsm peak one-cycle surge current ?maximum rated one-cycle ac current vs switching voltage ?maximum voltage prior to switching to on state vdrm peak off-state voltage ?maximum voltage that can be applied while maintaining off state vf on-state forward voltage ?maximum forward voltage measured at rated on-state current vt on-state voltage ?maximum voltage measured at rated on-state current electrical characteristics (t =25 unless otherwise specified a P0080SCE
2 h igh diode semiconductor electrical characteristics surge ratings electrical characteristics (t =25 unless otherwise specified a limiting values (absolute maximum rating) part number v drm v min. i drm ua max. v s v max. i s ma i t a v t v max. i h ma c o pf max. 1 vs is measured at 100kv/s 2 off-state capacitance is measured in v =2v,v =1v,f=1mhz dc rms 3 all measurements are made at an ambient temperature of 25 symbol t j parameter operang juncon temperature value - 40 to +150 unit t s storage temperature range - 40 to +150 r ja juncon to ambient on printed circuit 90 / w P0080SCE 6 5 25 800 4 2.2 50 130 series i pp ( a ) min 2 10us 8 20us 10 360us 10 1000us P0080SCE 400 400 175 100
t ypical characteristics 3 h igh diode semiconductor + v + i -i i s i h i drm v t v s - v i t v drm v-i characteristics 50 100 0 t r t d 0 peak value half value t r = rise me to peak value t d = decay me to half value wave fo rm = t r x t d ippC peak pulse current C %ipp tCtime (s) tr x td pulse waveform - 8 -- 40 20 0 20 40 60 80 100 120 140 16 0 - 6 - 4 0 2 4 6 8 10 12 14 percent of v change C % s juncon temperature (tj) C c 25 c 2.0 1. 8 1. 6 1. 4 1. 2 1. 0 0.8 0.6 0.4 - -20 40 0 20 40 60 80 1 00 120 1 40 160 25 c case temperature (t ) - c c rao of i h i (tc=25 c) h normalized v change vs. junction temperature normalized dc holding current vs. case temperature
4 jshd jshd h igh diode semiconductor dimensions in inches and (millimeters) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.155(3.94) 0.130(3.30) 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) 0.012(0.305) 0.006(0.152) 0.008(0.203)max. 0.096(2.44) 0.084(2.13) 4.26 1.8 smb smb
5 reel taping specifications for surface mount devices-smb h igh diode semiconductor
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